Electronic and photoconductive properties of ultrathin InGaN photodetectors

Lebedev, V.; Polyakov, V. M.; Hauguth-Frank, S.; Cimalla, V.; Wang, Ch. Y.; Ecke, G.; Schwierz, F.; Schober, A.; Lozano, J. G.; Morales, F. M.; González, D.; Ambacher, O.

期刊名称Journal of Applied Physics
作者Lebedev, V.; Polyakov, V. M.; Hauguth-Frank, S.; Cimalla, V.; Wang, Ch. Y.; Ecke, G.; Schwierz, F.; Schober, A.; Lozano, J. G.; Morales, F. M.; González, D.; Ambacher, O.
卷第103卷
期第7期
印刷ISSN0021-8979
电子ISSN1089-7550
文件大小886.60KB
发表时间2008-04
DOI10.1063/1.2903146

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Electronic and photoconductive properties of ultrathin InGaN photodetectors