Input noise modelling of deep submicron MOSFETs
- 期刊名称Australian Journal of Electrical and Electronics Engineering
- 作者Choudhary, S; Qureshi, S
- 卷第4卷
- 期第2期
- 印刷ISSN1448-837X
- 电子ISSN2205-362X
- 文件大小1164.56KB
- 发表时间2008-01
- DOI10.1080/1448837x.2008.11464182
- 页码159-165
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