MOS Transistor
- 期刊名称The Journal of The Institute of Electrical Engineers of Japan
- 作者WATANABE, Heiji
- 卷第128卷
- 期第3期
- 印刷ISSN1340-5551
- 电子ISSN1881-4190
- 文件大小927.50KB
- 发表时间2008
- DOI10.1541/ieejjournal.128.154
- 页码154-156
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