Localised defect-induced Schottky barrier lowering in n-GaN Schottky diodes
- 作者G. Parish; R.A. Kennedy; G.A. Umana-Membreno; B.D. Nener
- 卷第52卷
- 期第2期
- 印刷ISSN0038-1101
- 文件大小387.62KB
- 发表时间2008
- DOI10.1016/j.sse.2007.09.005
- 页码171-174
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