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Impact of Proton Irradiation on the RF Performance of 65 nm SOI CMOS Technology

Impact of Proton Irradiation on the RF Performance of 65 nm SOI CMOS Technology

Madan, Anuj; Phillips, Stanley D.; Cressler, John D.; Marshall, Paul W.; Liang, Qingqing; Freeman, Greg
  • 期刊名称IEEE Transactions on Nuclear Science
  • 作者Madan, Anuj; Phillips, Stanley D.; Cressler, John D.; Marshall, Paul W.; Liang, Qingqing; Freeman, Greg
  • 卷第56卷
  • 期第4期
  • 印刷ISSN0018-9499
  • 文件大小848.08KB
  • 发表时间2009-08
  • DOI10.1109/tns.2009.2014064
  • 页码1914-1919
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