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[IEEE 2009 International Semiconductor Device Research Symposium (ISDRS 2009) - College Park, MD (2009.12.9-2009.12.11)] 2009 International Semiconductor Device Research Symposium - Analytical modeling of the gate tunneling leakage for the determination of adequate high-K dielectrics in 22 nm double-gate SOI MOSFETs

[IEEE 2009 International Semiconductor Device Research Symposium (ISDRS 2009) - College Park, MD (2009.12.9-2009.12.11)] 2009 International Semiconductor Device Research Symposium - Analytical modeling of the gate tunneling leakage for the determination of adequate high-K dielectrics in 22 nm double-gate SOI MOSFETs

Darbandy, G.; Ritzenthaler, R.; Lime, F.; Garduo, S.I.; Estrada, M.; Cerdeira, A.; Iiguez, B.
  • 作者Darbandy, G.; Ritzenthaler, R.; Lime, F.; Garduo, S.I.; Estrada, M.; Cerdeira, A.; Iiguez, B.
  • 文件大小134.71KB
  • 发表时间2009
  • DOI10.1109/ISDRS.2009.5378235
  • 页码1-2
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