Nonvolatile static random access memory based on spin-transistor architecture
Shuto, Yusuke; Yamamoto, Shuu’ichirou; Sugahara, Satoshi
- 期刊名称Journal of Applied Physics
- 作者Shuto, Yusuke; Yamamoto, Shuu’ichirou; Sugahara, Satoshi
- 卷第105卷
- 期第7期
- 印刷ISSN0021-8979
- 文件大小335.46KB
- 发表时间2009
- DOI10.1063/1.3076895