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[IEEE 2009 IEEE International Reliability Physics Symposium (IRPS) - Montreal, QC, Canada (2009.04.26-2009.04.30)] 2009 IEEE International Reliability Physics Symposium - Systematic study of the relationship between 1/ƒ noise, interface state defects and mobility ddgradtion of high-K /metal CMOSFETs on (110) and (100) substrate

[IEEE 2009 IEEE International Reliability Physics Symposium (IRPS) - Montreal, QC, Canada (2009.04.26-2009.04.30)] 2009 IEEE International Reliability Physics Symposium - Systematic study of the relationship between 1/ƒ noise, interface state defects and mobility ddgradtion of high-K /metal CMOSFETs on (110) and (100) substrate

Sato, Motoyuki; Aoyama, Takayuki; Nara, Yasuo; Ohji, Yuzuru
  • 作者Sato, Motoyuki; Aoyama, Takayuki; Nara, Yasuo; Ohji, Yuzuru
  • 文件大小543.14KB
  • 发表时间2009
  • DOI10.1109/irps.2009.5173222
  • 页码45-50
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