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[IEEE Related Materials (IPRM) - Newport Beach, CA, USA (2009.05.10-2009.05.14)] 2009 IEEE International Conference on Indium Phosphide & Related Materials - Fabrication of InP/InGaAs channel MOSFET with MOVPE selectively regrown source

[IEEE Related Materials (IPRM) - Newport Beach, CA, USA (2009.05.10-2009.05.14)] 2009 IEEE International Conference on Indium Phosphide & Related Materials - Fabrication of InP/InGaAs channel MOSFET with MOVPE selectively regrown source

Kanazawa, Toru; Saito, Hisashi; Wakabayashi, Kazuya; Tajima, Tomonori; Miyamoto, Yasuyuki; Furuya, Kazuhito
  • 作者Kanazawa, Toru; Saito, Hisashi; Wakabayashi, Kazuya; Tajima, Tomonori; Miyamoto, Yasuyuki; Furuya, Kazuhito
  • 文件大小468.95KB
  • 发表时间2009
  • DOI10.1109/iciprm.2009.5012504
  • 页码315-318
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