Temperature-dependent current–voltage characteristics of the Au/n-InP diodes with inhomogeneous Schottky barrier height

• 作者F.E. Cimilli; M. Sağlam; H. Efeoğlu; A. Türüt
• 卷第404卷
• 印刷ISSN0921-4526
• 文件大小307.43KB
• 发表时间2009
• DOI10.1016/j.physb.2009.01.018
• 页码1558-1562