发现好书期刊,享受阅读乐趣

海量图书期刊资源,随时随地畅享阅读乐趣

The Effect of Silicon Nitride Stoichiometry on Charging Mechanisms in RF-MEMS Capacitive Switches

The Effect of Silicon Nitride Stoichiometry on Charging Mechanisms in RF-MEMS Capacitive Switches

Tavassolian, N.; Koutsoureli, M.; Papandreou, E.; Papaioannou, G.; Lacroix, B.; Liu, Z.; Papapolymerou, J.
  • 期刊名称IEEE Transactions on Microwave Theory and Techniques
  • 作者Tavassolian, N.; Koutsoureli, M.; Papandreou, E.; Papaioannou, G.; Lacroix, B.; Liu, Z.; Papapolymerou, J.
  • 卷第57卷
  • 期第12期
  • 印刷ISSN0018-9480
  • 电子ISSN1557-9670
  • 文件大小757.32KB
  • 发表时间2009-12
  • DOI10.1109/tmtt.2009.2033865
  • 页码3518-3524
← 返回【学霸图书馆】主页