发现好书期刊，享受阅读乐趣

海量图书期刊资源，随时随地畅享阅读乐趣

Photodetectors formed by an indium tin oxide/zinc oxide/p-type gallium nitride heterojunction with high ultraviolet-to-visible rejection ratio

Photodetectors formed by an indium tin oxide/zinc oxide/p-type gallium nitride heterojunction with high ultraviolet-to-visible rejection ratio

Lee, M. L.; Chi, Ping-Feng; Sheu, J. K.

期刊名称Applied Physics Letters
作者Lee, M. L.; Chi, Ping-Feng; Sheu, J. K.
卷第94卷
期第1期
印刷ISSN0003-6951
文件大小423.72KB
发表时间2009
DOI10.1063/1.3064130

← 返回【学霸图书馆】主页