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[IEEE 2009 17th International Conference on Advanced Thermal Processing of Semiconductors (RTP) - Albany, NY, USA (2009.09.29-2009.10.2)] 2009 17th International Conference on Advanced Thermal Processing of Semiconductors - 22nm node p+ junction scaling using B<inf>36</inf>H<inf>44</inf> and laser annealing with or W/O PAI

[IEEE 2009 17th International Conference on Advanced Thermal Processing of Semiconductors (RTP) - Albany, NY, USA (2009.09.29-2009.10.2)] 2009 17th International Conference on Advanced Thermal Processing of Semiconductors - 22nm node p+ junction scaling using B36H44 and laser annealing with or W/O PAI

Borland, John; Tanjyo, Masayasu; Hamamoto, Nariaki; Nagayama, Tsutomu; Muthukrishnan, Shankar; Zelenko, Jeremy; Mirshad, Iad; Johnson, Walt; Buyuklimanli, Temel
  • 作者Borland, John; Tanjyo, Masayasu; Hamamoto, Nariaki; Nagayama, Tsutomu; Muthukrishnan, Shankar; Zelenko, Jeremy; Mirshad, Iad; Johnson, Walt; Buyuklimanli, Temel
  • 文件大小633.17KB
  • 发表时间2009
  • DOI10.1109/rtp.2009.5373435
  • 页码1-5
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