[IEEE 2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC 2009) - Xi'an (2009.12.25-2009.12.27)] 2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) - The effect of the surface recombination on current gain for 4H-SiC BJT

• 作者Yourun Zhang, ; Bo Zhang, ; Zhaoji Li, ; Xiaochuan Deng, ; Xilin liu,
• 文件大小4572.42KB
• 发表时间2009
• DOI10.1109/edssc.2009.5394209
• 页码491-494