[IEEE 2009 17th International Conference on Advanced Thermal Processing of Semiconductors (RTP) - Albany, NY, USA (2009.09.29-2009.10.2)] 2009 17th International Conference on Advanced Thermal Processing of Semiconductors - 22nm node n+ SiC stressor using deep PAI+C7H7+P4 with laser annealing

Borland, John; Tanjyo, Masayasu; Hamamoto, Nariaki; Nagayama, Tsutomu; Muthukrishnan, Shankar; Zelenko, Jeremy; Mirshad, Iad; Johnson, Walt; Buyuklimanli, Temel; Itokawa, Hiroshi; Mizushima, Ichiro; Suguro, Kyoichi

作者Borland, John; Tanjyo, Masayasu; Hamamoto, Nariaki; Nagayama, Tsutomu; Muthukrishnan, Shankar; Zelenko, Jeremy; Mirshad, Iad; Johnson, Walt; Buyuklimanli, Temel; Itokawa, Hiroshi; Mizushima, Ichiro; Suguro, Kyoichi
文件大小790.44KB
发表时间2009
DOI10.1109/rtp.2009.5373426
页码1-8

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[IEEE 2009 17th International Conference on Advanced Thermal Processing of Semiconductors (RTP) - Albany, NY, USA (2009.09.29-2009.10.2)] 2009 17th International Conference on Advanced Thermal Processing of Semiconductors - 22nm node n+ SiC stressor using deep PAI+C7H7+P4 with laser annealing