Preparation of n-type nanocrystalline 3C-SiC films by hot-wire CVD using N2 as doping gas

• 作者Yoshiki Hoshide; Akimori Tabata; Akihiko Kitagawa; Akihiro Kondo
• 卷第517卷
• 期第12期
• 印刷ISSN0040-6090
• 文件大小689.86KB
• 发表时间2009
• DOI10.1016/j.tsf.2009.01.045
• 页码3524-3527