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Theoretical calculations of nonlinear electronic transport behavior in III-nitrides: GaN and AlN

Theoretical calculations of nonlinear electronic transport behavior in III-nitrides: GaN and AlN

Clóves G. Rodrigues; Áurea R. Vasconcellos; Roberto Luzzi
  • 作者Clóves G. Rodrigues; Áurea R. Vasconcellos; Roberto Luzzi
  • 卷第246卷
  • 期第2期
  • 印刷ISSN0370-1972
  • 电子ISSN1521-3951
  • 文件大小920.34KB
  • 发表时间2009
  • DOI10.1002/pssb.200844157
  • 页码417-425
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