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Structural Properties of Doped GaN on Si(111) Studied by X-Ray Diffraction Techniques

Structural Properties of Doped GaN on Si(111) Studied by X-Ray Diffraction Techniques

L. S. Chuah; Z. Hassan; S. S. Ng; H. Abu Hassan
  • 作者L. S. Chuah; Z. Hassan; S. S. Ng; H. Abu Hassan
  • 卷第28卷
  • 印刷ISSN0195-9298
  • 电子ISSN1573-4862
  • 文件大小505.48KB
  • 发表时间2009-12
  • DOI10.1007/s10921-009-0054-8
  • 页码125-130
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