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Physical phenomena affecting performance and reliability of 4H–SiC bipolar junction transistors

Peter G. Muzykov; Robert M. Kennedy; Qingchun (Jon) Zhang; Craig Capell; Al Burk; Anant Agarwal; Tangali S. Sudarshan

作者Peter G. Muzykov; Robert M. Kennedy; Qingchun (Jon) Zhang; Craig Capell; Al Burk; Anant Agarwal; Tangali S. Sudarshan
卷第49卷
期第1期
印刷ISSN0026-2714
文件大小1119.92KB
发表时间2009
DOI10.1016/j.microrel.2008.10.009
页码32-37