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Direct tunneling of electrons in Al-n+-Si-SiO2-n-Si structures under conditions of nonstationary depletion of the semiconductor surface of the majority charge carriers

Direct tunneling of electrons in Al-n+-Si-SiO2-n-Si structures under conditions of nonstationary depletion of the semiconductor surface of the majority charge carriers

E. I. Goldman; Yu. V. Gulyaev; A. G. Zhdan; G. V. Chucheva

作者E. I. Goldman; Yu. V. Gulyaev; A. G. Zhdan; G. V. Chucheva
卷第44卷
期第8期
印刷ISSN1063-7826
电子ISSN1090-6479
文件大小192.60KB
发表时间2010-08
DOI10.1134/s1063782610080105
页码1016-1019

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