Control of acceptor doping in MOCVD HgCdTe epilayers
- 作者P. Madejczyk; A. Piotrowski; K. Kłos; W. Gawron; J. Rutkowski; A. Rogalski
- 卷第18卷
- 期第3期
- 印刷ISSN1230-3402
- 电子ISSN1896-3757
- 文件大小1292.96KB
- 发表时间2010-09
- DOI10.2478/s11772-010-1023-x
- 页码271-276
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