Dependence of melting, roughness and contact resistances on Ge and Ni content in alloyed AuGe/Ni/Au-type electrical contacts to GaAs/AlGaAs multilayer structures
Abhilash, T S; Kumar, Ch Ravi; Sreedhar, B; Rajaram, G
- 期刊名称Semiconductor Science and Technology
- 作者Abhilash, T S; Kumar, Ch Ravi; Sreedhar, B; Rajaram, G
- 卷第25卷
- 期第3期
- 印刷ISSN0268-1242
- 电子ISSN1361-6641
- 文件大小458.28KB
- 发表时间2010-03-04
- DOI10.1088/0268-1242/25/3/035002