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Effects of (NH[sub 4])[sub 2]S and NH[sub 4]OH surface treatments prior to SiO[sub 2] capping and thermal annealing on 1.3âÎ¼m GaInAsN/GaAs quantum well structures

Effects of (NH[sub 4])[sub 2]S and NH[sub 4]OH surface treatments prior to SiO[sub 2] capping and thermal annealing on 1.3âÎ¼m GaInAsN/GaAs quantum well structures

PolojaÌrvi, V.; Salmi, J.; Schramm, A.; Tukiainen, A.; Guina, M.; Pakarinen, J.; Arola, E.; LaÌng, J.; VaÌyrynen, I. J.; Laukkanen, P.

期刊名称Applied Physics Letters
作者PolojaÌrvi, V.; Salmi, J.; Schramm, A.; Tukiainen, A.; Guina, M.; Pakarinen, J.; Arola, E.; LaÌng, J.; VaÌyrynen, I. J.; Laukkanen, P.
卷第97卷
期第11期
印刷ISSN0003-6951
文件大小631.21KB
发表时间2010
DOI10.1063/1.3487784

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