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Utilizing the interface adsorption of nitrogen for the growth of high-quality GaInAsN/GaAs quantum wells by metal organic chemical vapor deposition for near infrared applications

Utilizing the interface adsorption of nitrogen for the growth of high-quality GaInAsN/GaAs quantum wells by metal organic chemical vapor deposition for near infrared applications

Albo, Asaf; Cytermann, Catherine; Bahir, Gad; Fekete, Dan
  • 期刊名称Applied Physics Letters
  • 作者Albo, Asaf; Cytermann, Catherine; Bahir, Gad; Fekete, Dan
  • 卷第96卷
  • 期第14期
  • 印刷ISSN0003-6951
  • 文件大小309.17KB
  • 发表时间2010
  • DOI10.1063/1.3360216
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