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Enhancement of the conversion efficiency of GaN-based photovoltaic devices with AlGaN/InGaN absorption layers

Enhancement of the conversion efficiency of GaN-based photovoltaic devices with AlGaN/InGaN absorption layers

Yang, C. C.; Sheu, J. K.; Liang, Xin-Wei; Huang, Min-Shun; Lee, M. L.; Chang, K. H.; Tu, S. J.; Huang, Feng-Wen; Lai, W. C.
  • 期刊名称Applied Physics Letters
  • 作者Yang, C. C.; Sheu, J. K.; Liang, Xin-Wei; Huang, Min-Shun; Lee, M. L.; Chang, K. H.; Tu, S. J.; Huang, Feng-Wen; Lai, W. C.
  • 卷第97卷
  • 期第2期
  • 印刷ISSN0003-6951
  • 文件大小453.43KB
  • 发表时间2010
  • DOI10.1063/1.3463469
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