Improvement in bias stability of amorphous-InGaZnO[sub 4] thin film transistors with SiO[sub x] passivation layers

• 期刊名称Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
• 作者Lim, Wantae; Douglas, E. A.; Norton, D. P.; Pearton, S. J.; Ren, F.; Heo, Young-Woo; Son, S. Y.; Yuh, J. H.
• 卷第28卷
• 期第1期
• 印刷ISSN1071-1023
• 文件大小667.02KB
• 发表时间2010
• DOI10.1116/1.3276774