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[IEEE 2010 23rd IEEE ICMTS International Conference on Microelectronic Test Structures (ICMTS 2010) - Hiroshima (2010.03.22-2010.03.25)] 2010 International Conference on Microelectronic Test Structures (ICMTS) - Investigation on the field leakage current in 0.35μm CMOS technology at high temperature

[IEEE 2010 23rd IEEE ICMTS International Conference on Microelectronic Test Structures (ICMTS 2010) - Hiroshima (2010.03.22-2010.03.25)] 2010 International Conference on Microelectronic Test Structures (ICMTS) - Investigation on the field leakage current in 0.35μm CMOS technology at high temperature

Soon Tat Kong, ; Ronald, Paul Stribley; Lee, Chris
  • 作者Soon Tat Kong, ; Ronald, Paul Stribley; Lee, Chris
  • 文件大小403.42KB
  • 发表时间2010
  • DOI10.1109/icmts.2010.5466849
  • 页码102-106
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