[IEEE 2010 IEEE 3rd International Nanoelectronics Conference (INEC) - Hong Kong, China (2010.01.3-2010.01.8)] 2010 3rd International Nanoelectronics Conference (INEC) - Memory characteristics of multilayer structures with lanthanum-aluminate charge trap by fowler-nordheim tunneling
- 作者Seung-Yong Cha, ; Hyo-June Kim, ; Doo-Jin Choi,
- 文件大小173.50KB
- 发表时间2010
- DOI10.1109/inec.2010.5424946
- 页码1210-1211
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