[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Improvement of electrical characteristics on P+ Source/Drain Ion Implantation by N2 anneal for NAND Flash memory
- 作者Kim, Young-suk; Park, Hyun-mog; Par, Jong-ho
- 文件大小312.44KB
- 发表时间2010
- DOI10.1109/icsict.2010.5667592
- 页码1169-1171
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