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[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - A new Membrane PSOI High Voltage Device with a Buried P+ layer

[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - A new Membrane PSOI High Voltage Device with a Buried P+ layer

Yang, Xiao-ming; Zhang, Bo; Luo, Xiao-rong
  • 作者Yang, Xiao-ming; Zhang, Bo; Luo, Xiao-rong
  • 文件大小439.51KB
  • 发表时间2010
  • DOI10.1109/icsict.2010.5667421
  • 页码785-787
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