[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - A new Membrane PSOI High Voltage Device with a Buried P+ layer
Yang, Xiao-ming; Zhang, Bo; Luo, Xiao-rong
- 作者Yang, Xiao-ming; Zhang, Bo; Luo, Xiao-rong
- 文件大小439.51KB
- 发表时间2010
- DOI10.1109/icsict.2010.5667421
- 页码785-787