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[IEEE 2010 International Conference on Microelectronic Test Structures (ICMTS) - Hiroshima, Japan (2010.03.22-2010.03.25)] 2010 International Conference on Microelectronic Test Structures (ICMTS) - A unique and accurate extraction technique of the asymmetric bottom-pillar resistance for the vertical MOSFET

[IEEE 2010 International Conference on Microelectronic Test Structures (ICMTS) - Hiroshima, Japan (2010.03.22-2010.03.25)] 2010 International Conference on Microelectronic Test Structures (ICMTS) - A unique and accurate extraction technique of the asymmetric bottom-pillar resistance for the vertical MOSFET

Sakui, Koji; Endoh, Tetsuo

作者Sakui, Koji; Endoh, Tetsuo
文件大小2171.89KB
发表时间2010
DOI10.1109/icmts.2010.5466812
页码220-224

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