![Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires]()
Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowiresDubrovskii, V. G.; Sibirev, N. V.; Cirlin, G. E.; Soshnikov, I. P.; Chen, W. H.; Larde, R.; Cadel, E.; Pareige, P.; Xu, T.; Grandidier, B.; Nys, J.-P.; Stievenard, D.; Moewe, M.; Chuang, L. C.; Chang-Hasnain, C. · Physical Review B · 2009