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Stacked field effect transistor integration in double channel transistors (DCT) with tri-state transfer slope and ballistic field effect behavior

Stacked field effect transistor integration in double channel transistors (DCT) with tri-state transfer slope and ballistic field effect behavior

Frank Wirbeleit
  • 作者Frank Wirbeleit
  • 卷第87卷
  • 期第12期
  • 印刷ISSN0167-9317
  • 文件大小1295.71KB
  • 发表时间2010
  • DOI10.1016/j.mee.2010.05.003
  • 页码2456-2462
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