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Ultrahigh-Speed AlInN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon with
<i>F</i>
<sub/>T</sub>
= 143 GHz

Ultrahigh-Speed AlInN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon with F _T = 143 GHz

Sun, Haifeng; Alt, Andreas R.; Benedickter, Hansruedi; Bolognesi, C. R.; Feltin, Eric; Carlin, Jean-François; Gonschorek, Marcus; Grandjean, Nicolas

期刊名称Applied Physics Express
作者Sun, Haifeng; Alt, Andreas R.; Benedickter, Hansruedi; Bolognesi, C. R.; Feltin, Eric; Carlin, Jean-François; Gonschorek, Marcus; Grandjean, Nicolas
卷第3卷
期第9期
印刷ISSN1882-0778
电子ISSN1882-0786
文件大小146.96KB
发表时间2010-9-3
DOI10.1143/APEX.3.094101

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