发现好书期刊，享受阅读乐趣

海量图书期刊资源，随时随地畅享阅读乐趣

Ultra-shallow junctions formed by quasi-epitaxial growth of boron and phosphorous-doped silicon films at 175 °C by rf-PECVD

Ultra-shallow junctions formed by quasi-epitaxial growth of boron and phosphorous-doped silicon films at 175 °C by rf-PECVD

M. Labrune; M. Moreno; P. Roca i Cabarrocas

作者M. Labrune; M. Moreno; P. Roca i Cabarrocas
卷第518卷
期第9期
印刷ISSN0040-6090
文件大小486.44KB
发表时间2010
DOI10.1016/j.tsf.2009.09.143
页码2528-2530

← 返回【学霸图书馆】主页