High-Etching-Selectivity Barrier SiC (k<3.5) Film for 32-nm-Node Copper/Low-kInterconnects
- 作者J. Nakahira; S. Nagano; A. Gawase; Y. Ohashi; H. Shimizu; S. Chikaki; N. Oda; S. Kondo; S. Hasaka; S. Saito
- 文件大小721.63KB
- 发表时间2010
- DOI10.1143/JJAP.49.05FD04
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