The effects of gas flow rates on the etch characteristics of silicon nitride with an extreme ultra-violet resist pattern in CH2F2/N2/Ar capacitively coupled plasmas

• 作者B.S. Kwon; J.H. Lee; N.-E. Lee
• 卷第519卷
• 期第20期
• 文件大小649.15KB
• 发表时间2011
• DOI10.1016/j.tsf.2010.12.115
• 页码6741-6745