ECS Transactions [ECS 220th ECS Meeting - Boston, MA (October 9 - October 14, 2011)] - (Invited) Electric-Field and Thermally-Activated Failure Mechanisms of AlGaN/GaN High Electron Mobility Transistors
- 作者Zanoni, Enrico; Meneghesso, Gaudenzio; Meneghini, Matteo; Stocco, Antonio; Rampazzo, Fabiana; Silvestri, Riccardo; Rossetto, Isabella; Ronchi, Nicolò
- 印刷ISSN1938-5862
- 文件大小864.93KB
- 发表时间2011
- DOI10.1149/1.3631501
- 页码237-249
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