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[IEEE 2011 69th Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2011.06.20-2011.06.22)] 69th Device Research Conference - Fabrication of vertical InAs-Si heterojunction tunnel field effect transistors

[IEEE 2011 69th Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2011.06.20-2011.06.22)] 69th Device Research Conference - Fabrication of vertical InAs-Si heterojunction tunnel field effect transistors

Schmid, H.; Moselund, K. E.; Bjork, M. T.; Richter, M.; Ghoneim, H.; Bessire, C. D.; Riel, H.
  • 作者Schmid, H.; Moselund, K. E.; Bjork, M. T.; Richter, M.; Ghoneim, H.; Bessire, C. D.; Riel, H.
  • 文件大小1760.96KB
  • 发表时间2011
  • DOI10.1109/drc.2011.5994479
  • 页码181-182
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