发现好书期刊，享受阅读乐趣

海量图书期刊资源，随时随地畅享阅读乐趣

[IEEE 2011 International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Osaka, Japan (2011.05.19-2011.05.20)] 2011 International Meeting for Future of Electron Devices - Drain current - gate voltage characteristics of Si MOSFETs fabricated on Si-on-SiC wafers

[IEEE 2011 International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Osaka, Japan (2011.05.19-2011.05.20)] 2011 International Meeting for Future of Electron Devices - Drain current - gate voltage characteristics of Si MOSFETs fabricated on Si-on-SiC wafers

Araki, Ryosuke; Shimizu, Hideo; Kurumi, Takamasa; Kinoshita, Hiroyuki; Yoshimoto, Masahiro
  • 作者Araki, Ryosuke; Shimizu, Hideo; Kurumi, Takamasa; Kinoshita, Hiroyuki; Yoshimoto, Masahiro
  • 文件大小358.05KB
  • 发表时间2011
  • DOI10.1109/imfedk.2011.5944848
  • 页码68-69
同作者推荐
同期刊推荐
← 返回【学霸图书馆】主页
© 2026 学霸图书馆 · 让阅读成为习惯