[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - First principle study of the stability of H atoms in SiN layers on MONOS-type memories during program/erase operations
Yamaguchi, Keita; Otake, Akira; Kamiya, Katsumasa; Shiraishi, Kenji; Shigeta, Yasuteru
- 作者Yamaguchi, Keita; Otake, Akira; Kamiya, Katsumasa; Shiraishi, Kenji; Shigeta, Yasuteru
- 文件大小4155.17KB
- 发表时间2011
- DOI10.1109/sispad.2011.6034917
- 页码215-218