Enhanced Sensing Performance of MISiC Schottky-Diode Hydrogen Sensor by Using HfON as Gate Insulator
- 期刊名称IEEE Sensors Journal
- 作者Tang, W. M.; Leung, C. H.; Lai, P. T.
- 卷第11卷
- 期第11期
- 印刷ISSN1530-437X
- 电子ISSN1558-1748
- 文件大小1046.53KB
- 发表时间2011-11
- DOI10.1109/jsen.2011.2148709
- 页码2940-2946
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