Electrically-driven metal-insulator transition with tunable threshold voltage in a VO2-SmNiO3 heterostructure on silicon
Ha, Sieu D.; Aydogdu, Gulgun H.; Viswanath, B.; Ramanathan, Shriram
- 期刊名称Journal of Applied Physics
- 作者Ha, Sieu D.; Aydogdu, Gulgun H.; Viswanath, B.; Ramanathan, Shriram
- 卷第110卷
- 期第2期
- 印刷ISSN0021-8979
- 文件大小827.55KB
- 发表时间2011
- DOI10.1063/1.3610798