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AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxy

AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxy

Hirama, Kazuyuki; Taniyasu, Yoshitaka; Kasu, Makoto
  • 期刊名称Applied Physics Letters
  • 作者Hirama, Kazuyuki; Taniyasu, Yoshitaka; Kasu, Makoto
  • 卷第98卷
  • 期第16期
  • 印刷ISSN0003-6951
  • 文件大小705.96KB
  • 发表时间2011
  • DOI10.1063/1.3574531
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