AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxy
Hirama, Kazuyuki; Taniyasu, Yoshitaka; Kasu, Makoto
- 期刊名称Applied Physics Letters
- 作者Hirama, Kazuyuki; Taniyasu, Yoshitaka; Kasu, Makoto
- 卷第98卷
- 期第16期
- 印刷ISSN0003-6951
- 文件大小705.96KB
- 发表时间2011
- DOI10.1063/1.3574531