[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Photon-recycling GaN p-n diodes demonstrating temperature-independent, extremely low on-resistance

Mochizuki, K.; Nomoto, K.; Hatakeyama, Y.; Katayose, H.; Mishima, T.; Kaneda, N.; Tsuchiya, T.; Terano, A.; Ishigaki, T.; Tsuchiya, T.; Tsuchiya, R.; Nakamura, T.

作者Mochizuki, K.; Nomoto, K.; Hatakeyama, Y.; Katayose, H.; Mishima, T.; Kaneda, N.; Tsuchiya, T.; Terano, A.; Ishigaki, T.; Tsuchiya, T.; Tsuchiya, R.; Nakamura, T.
文件大小364.98KB
发表时间2011
DOI10.1109/iedm.2011.6131617

发现好书期刊，享受阅读乐趣

[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Photon-recycling GaN p-n diodes demonstrating temperature-independent, extremely low on-resistance