[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - Modeling of thermoelectric effects in phase change memory cells
- 作者Dirisaglik, Faruk; Bakan, Gokhan; Gokirmak, Ali; Silva, Helena
- 文件大小284.65KB
- 发表时间2011
- DOI10.1109/isdrs.2011.6135342
- 页码1-2
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