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Characterization of InGaN/GaN Multiple Quantum Wells Grown on Sapphire Substrates by Nano-scale Epitaxial Lateral Overgrowth Technique

Characterization of InGaN/GaN Multiple Quantum Wells Grown on Sapphire Substrates by Nano-scale Epitaxial Lateral Overgrowth Technique

Fong, W.K.; Leung, K.K.; Surya, Charles
  • 期刊名称MRS Proceedings
  • 作者Fong, W.K.; Leung, K.K.; Surya, Charles
  • 卷第1288卷
  • 电子ISSN1946-4274
  • 文件大小4701.68KB
  • 发表时间2011-1
  • DOI10.1557/opl.2011.14
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