AIP Conference Proceedings [AIP THE 4TH NANOSCIENCE AND NANOTECHNOLOGY SYMPOSIUM (NNS2011): An International Symposium - Bali, (Indonesia) (23–25 September 2011)] - An Analysis of Electron Direct Tunneling Current through a High-K MOS Capacitor by Including the Effect of a Trap between HfO[sub 2] and SiO[sub 2] Interfaces

• 作者Sahdan, Muhammad F.; Achmari, Panji; Noor, Fatimah A.; Iskandar, Ferry; Abdullah, Mikrajuddin; Iskandar, Ferry; Abdullah, Mikrajuddin
• 印刷ISSN0094-243X
• 文件大小408.88KB
• 发表时间2011
• DOI10.1063/1.3667224
• 页码75-78