The analysis of I–V characteristics of Schottky diodes by thermionic emission with a Gaussian distribution of barrier height

• 作者İlbilge Dökme
• 卷第51卷
• 期第2期
• 印刷ISSN0026-2714
• 文件大小431.53KB
• 发表时间2011
• DOI10.1016/j.microrel.2010.08.017
• 页码360-364