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New trench gate power MOSFET with high breakdown voltage and reduced on-resistance using a SiGe zone in drift region

New trench gate power MOSFET with high breakdown voltage and reduced on-resistance using a SiGe zone in drift region

Mahsa Mehrad; Ali A. Orouji

作者Mahsa Mehrad; Ali A. Orouji
卷第12卷
期第5期
印刷ISSN1567-1739
文件大小611.10KB
发表时间2012
DOI10.1016/j.cap.2012.03.023

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